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Ren Wei team at Shanghai University has made a series of research progress in the field of nitride semiconductor

wallpapers News 2021-05-07
According to the news of the School of Science of Shanghai University, Prof. Wei Ren's team from the International Center for Quantum and Molecular Structure (ICQMS) and the Department of Physics of Shanghai University has made a series of research progress in the field of nitride semiconductor recently. The results were recently published in the ACS Applied Materials & Interfaces, the Royal Society of Chemistry Nanoscale, and the American Physical Union Applied Physics Letters.
In modern society, we rely more and more on semiconductors, and the exploration of new semiconductor materials has become a fundamentally and technically important problem. Among many compound semiconductors, nitrides are more attractive because of their abundant and environmentally friendly nitrogen composition. At the same time, many nitrides have relatively high chemical stability at high temperatures, which is beneficial for applications in harsh environments.
Through first-principles calculations based on density functional theory (DFT), Prof. Wei Ren and his team obtained the following series of results:
 
1. Due to the close competition of the parent phase structure in the two rare earth nitrides (the volume of the two nitrides is similar), the combined superlattice exhibits a flatter potential energy distribution and a larger piezoelectric response than the parent phase.
This work verifies that the volume matching mechanism is also applicable to the identification of superlattice piezoelectric materials, and it is predicted that the volume matching mechanism may be applied to non-nitriding compounds. (ACS Applied Materials & Interfaces).
 
2. A class of 2-D multi-iron transition metal halides with room temperature ferromagnetism and in-plane ferroelasticity can be controlled by a reversible uniaxial in-plane strain.
This work provides guidance for future experiments and the design of novel functional materials at the nanoscale, such as strain-controlled spintronic devices. (Nanoscale).
 
3. A group of nitride compounds showing both significant ferroelectric polarization and piezoelectric response, and it is predicted that the compound composed of Cr element adjacent to V is a multiferroic material with a ferromagnetic ground state.
This work provides guidance for the potential applications of nitride materials in spintronics, sensors and memory devices. (Applied Physics Letters).

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